Jarašiūnas, K. : rechercher sur Z-Library

Année:

2010

Langue:

english

Fichier:

PDF, 957 KB

english, 2010

Carrier dynamics in coalescence overgrowth of GaN nanocolumns

Hsiang-Chen Wang, Tsung-Yi Tang, C.C. Yang, T. Malinauskas, K. Jarasiunas

Journal:

Aleksiejunas, Ramunas, Kadys, Arunas, Jarasiunas, Kestutis, Saas, Florian, Griebner, Uwe, Tomm, Jens W.

Année:

2010

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2010

[AIP PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna (Austria) (24-28 July 2006)] AIP Conference Proceedings - Carrier transport and recombination in resonantly excited InGaAs/GaAs MQWs

Année:

2007

Langue:

english

Fichier:

PDF, 780 KB

english, 2007

Optical evaluation of carrier lifetime and diffusion length in synthetic diamonds

Malinauskas, T., Jarasiunas, K., Ivakin, E., Ralchenko, V., Gontar, A., Ivakhnenko, S.

Journal:

Diamond and Related Materials

Année:

2008

Langue:

english

Fichier:

PDF, 435 KB

english, 2008

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means

Neimontas, K., Jarašiūnas, Kestutis, Yakimova, Rositza, Syväjärvi, Mikael, Ferro, Gabriel

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 452 KB

english, 2009

Photo-electrical and transport properties of hydrothermal ZnO

Onufrijevs, P., Ščajev, P., Jarašiūnas, K., Medvid, A., Korsaks, V., Mironova-Ulmane, N., Zubkins, M., Mimura, H.

Journal:

Journal of Applied Physics

Année:

2016

Langue:

english

Fichier:

PDF, 953 KB

english, 2016

Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques

Ščajev, Patrik, Miasojedovas, Saulius, Mekys, Algirdas, Kuciauskas, Darius, Lynn, Kelvin G., Swain, Santosh K., Jarašiūnas, Kęstutis

Journal:

Journal of Applied Physics

Année:

2018

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2018

Dynamics of Light-Triggered Gunn-Domain Structure: Domain Multiplication and Current Oscillations

L. Subačius, K. Jarašiūnas, E. Starikov, V. Gružinskis, P. Shiktorov

Journal:

R. Baltramiejũnas, K. Jarašiuñas, J. Vaitkus, D. Veleckas

Année:

1997

Langue:

english

Fichier:

PDF, 157 KB

english, 1997

Transient holograms on free carriers and excitons generated by Q-switched and mode-locked laser pulses in semiconductors

Journal:

Kestutis Jarasiunas, Philippe Delaye, Jean-Claude Launay, Gérald Roosen

Année:

1976

Langue:

english

Fichier:

PDF, 94 KB

english, 1976

Space charge field feed-back effect on carrier transport in photorefractive CdTe: V

Journal:

Année:

1992

Langue:

english

Fichier:

PDF, 486 KB

english, 1992

Investigation of photoelectrical properties and carrier transport in porous silicon structures by the transient grating technique

K Jarašiũnas, V Mizeikis, M Sũdǐus, L Subačius, K Grigoras, I Šimkiene

Journal:

Materials Science and Engineering: B

Année:

1996

Langue:

english

Fichier:

PDF, 469 KB

english, 1996

Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

A. Kadys, M. Sudzius, K. Jarasiunas, Luhong Mao, Niefeng Sun

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 383 KB

english, 2006

Role of deep traps in carrier generation and transport in differently doped InP wafers

N. Sun, K. Jarasiunas, M. Sudzius, A. Kadys, X. Zhou, T. Sun

Journal:

Materials Science in Semiconductor Processing

Année:

2006

Langue:

english

Fichier:

PDF, 198 KB

english, 2006

Heterodyne detection scheme for light-induced transient grating experiment

T. Malinauskas, S. Nargelas, R. Aleksiejunas, K. Jarasiunas

Journal:

Superlattices and Microstructures

Année:

2008

Langue:

english

Fichier:

PDF, 286 KB

english, 2008

Advantages of the time-resolved four-wave mixing technique for studies of non-equilibrium carrier dynamics in bulk semiconductors and structures

R. Aleksiejunas, A. Kadys, T. Malinauskas, K. Neimontas, V. Gudelis, K. Jarasiunas, P. Fochuk, P. Feychuk

Journal:

Optical Materials

Année:

2008

Langue:

english

Fichier:

PDF, 142 KB

english, 2008

Measurement of the decay of light-induced gratings for characterization of QW heterostructures of type I and II

H. Weinert, K. Jarasiunas, J. Kollenda, M. Petrauskas

Journal:

Année:

1991

Langue:

english

Fichier:

PDF, 282 KB

english, 1991

Time-resolved build-up and decay of photorefractive and free-carrier gratings in CdTe:V

Kestutis Jarasiunas, Philippe Delaye, Gérald Roosen, Jean-Claude Launay

Journal:

Materials Science and Engineering: B

Année:

1993

Langue:

english

Fichier:

PDF, 440 KB

english, 1993

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

T. Malinauskas, R. Aleksiejūnas, K. Jarašiūnas, B. Beaumont, P. Gibart, A. Kakanakova-Georgieva, E. Janzen, D. Gogova, B. Monemar, M. Heuken

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 210 KB

english, 2007

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

B. Monemar, P.P. Paskov, J.P. Bergman, T. Paskova, C. Hemmingsson, T. Malinauskas, K. Jarasiunas, P. Gibart, B. Beaumont

Journal:

Physica B: Condensed Matter

Année:

2006

Langue:

english

Fichier:

PDF, 164 KB

english, 2006

Carrier transport and recombination in MOVPE-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures

V Mizeikis, K Jarašiunas, N Lovergine, P Prete

Journal:

Journal of Crystal Growth

Année:

2000

Langue:

english

Fichier:

PDF, 190 KB

english, 2000

Direct determination of EL2 thermal recovery rate at 300 K

R. Aleksiejūnas, M. Sūdžius, K. Jarašiūnas

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 430 KB

english, 2001

Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures

V Mizeikis, K Jarasiunas, N Lovergine, K Kuroda

Journal:

Physica B: Condensed Matter

Année:

2000

Langue:

english

Fichier:

PDF, 315 KB

english, 2000

Microwave-induced multiple field-domain structure in photoexcited GaAs crystals

L Subačiusa, P Shiktorov, V Gružinskis, E Starikov, K Jarašiūnas, L Reggiani

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 135 KB

english, 1999

Characterisation of bulk crystals and structures by light-induced transient grating technique

K. Jarasiunas, N. Lovergine

Journal:

Materials Science and Engineering: B

Année:

2002

Langue:

english

Fichier:

PDF, 136 KB

english, 2002

Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques

K. Jarašiūnas, E. Gaubas, R. Aleksiejūnas, M. Sūdžius, V. Gudelis, T. Malinauskas, P. Prete, A. M. Mancini, N. Lovergine

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 164 KB

english, 2003

Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique

K. Jarašiūnas, T. Malinauskas, R. Aleksiejūnas, M. Sūdžius, E. Frayssinet, B. Beaumont, J.-P. Faurie, P. Gibart

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 141 KB

english, 2005

Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures

K. Jarašiūnas, R. Aleksiejūnas, T. Malinauskas, M. Sūdžius, S. Miasojedovas, S. Juršėnas, A. Žukauskas, R. Gaska, J. Zhang, M. S. Shur, J. W. Yang, E. Kuokštis, M. A. Khan

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 489 KB

english, 2005

Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE

E. V. Lutsenko, V. N. Pavlovskii, A. V. Danilchyk, K. A. Osipov, N. V. Rzheutskii, V. Z. Zubialevich, A. L. Gurskii, G. P. Yablonskii, T. Malinauskas, K. Jarašiūnas, K. Kazlauskas, S. Juršėnas, S. Mia

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 173 KB

english, 2006

Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light-induced transient grating technique

T. Malinauskas, K. Jarašiūnas, E. Ivakin, N. Tranchant, M. Nesladek

Journal:

Patrik Ščajev, Vytautas Gudelis, Eugeny Ivakin, Kęstutis Jarašiūnas

Année:

2010

Langue:

english

Fichier:

PDF, 573 KB

english, 2010

Nonequilibrium carrier dynamics in bulk HPHT diamond at two-photon carrier generation

Journal:

K. Jarašiūnas, J. Vaitkus

Année:

2011

Langue:

english

Fichier:

PDF, 330 KB

english, 2011

Properties of a laser induced phase grating in CdSe

Journal:

K. Jarašiūnas, J. Vaitkus

Année:

1974

Langue:

english

Fichier:

PDF, 139 KB

english, 1974

Investigation of non-equilibrium processes in semiconductors by the method of transient holograms

Journal:

Année:

1977

Langue:

english

Fichier:

PDF, 536 KB

english, 1977

Light Induced Transient Grating Decay in Si and Some AIIBIV Compounds

E. Gaubas, K. Jarašiūnas, J. Vaitkus

Journal:

I. Rückmann, K. Jarašiūnas, J. Čecnulevičius

Année:

1982

Langue:

english

Fichier:

PDF, 195 KB

english, 1982

Laser-Induced Probe-Beam Defocusing at the Band Edge of CdSxSe1−x Mixed Crystal at Room Temperature

Journal:

H. Weinert, K. Jarašiūnas, B. Schumann

Année:

1986

Langue:

english

Fichier:

PDF, 520 KB

english, 1986

Carrier Diffusion and Recombination in Type II GaAs/CaxSr1−xF2 Quantum Well Heterostructures Studied by the Transient Grating Technique

Journal:

Année:

1989

Langue:

english

Fichier:

PDF, 296 KB

english, 1989

Optical investigation of non-equilibrium carrier dynamics in differently doped VGF-grown ZnTe single crystals

R. Aleksiejūnas, A. Kadys, K. Jarašiūnas, N. Lovergine, T. Asahi

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 388 KB

english, 2006

Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers

T. Malinauskas, K. Jarašiūnas, R. Aleksiejunas, D. Gogova, B. Monemar, B. Beaumont, P. Gibart

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 245 KB

english, 2006

High temperature electrical properties of CdTe〈Pb〉 crystals under Te saturation

P. Fochuk, R. Grill, A. Kadys, K. Jarasiunas, D. Verstraeten, P. Feychuk, O. Parfenyuk, O. Panchuk

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 493 KB

english, 2007

Evaluation of deep-impurity governed photoelectrical properties in differently doped CdTe

A. Kadys, M. Sudzius, K. Jarasiunas, P. Fochuk, P. Feychuk, M. L. Hellin, D. Verstraeten

Journal:

Kęstutis Jarašiūnas, Tadas Malinauskas, Saulius Nargelas, Vytautas Gudelis, Juozas V. Vaitkus, Vitali Soukhoveev, Alexander Usikov

Année:

2007

Langue:

english

Fichier:

PDF, 432 KB

english, 2007

Layer thickness dependent carrier recombination rate in HVPE GaN

Journal:

Patrik Ščajev, Kęstutis Jarašiūnas, Serdal Okur, Ümit Özgür, Hadis Morkoç

Année:

2010

Langue:

english

Fichier:

PDF, 299 KB

english, 2010

Carrier dynamics under two- and single-photon excitation in bulk GaN

Journal:

I. Rückmann, K. Jarašiūnas, E. Gaubas

Année:

2012

Langue:

english

Fichier:

PDF, 285 KB

english, 2012

Transient Light-Induced Gratings Due to Excitons in CdSe

Journal:

K. Jarašiunas, J. Vaitkus

Année:

1985

Langue:

english

Fichier:

PDF, 901 KB

english, 1985

Transient Gratings in Metrology of Semiconductor Parameters and Optoelectronic Devices

Journal:

Année:

1988

Langue:

english

Fichier:

PDF, 464 KB

english, 1988

Optical Nonlinearities and Carrier Transport in GaAs: EL2 at High Excitation Levels

K. Jarasiunas, Ph. Delaye, G. Roosen

Journal:

Année:

1993

Langue:

english

Fichier:

PDF, 731 KB

english, 1993

Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique

R. Aleksiejūnas, M. Sūdžius, V. Gudelis, T. Malinauskas, K. Jarašiūnas, Q. Fareed, R. Gaska, M. S. Shur, J. Zhang, J. Yang, E. Kuokštis, M. A. Khan

Journal:

Arunas Kadys, Kestutis Jarasiunas, Markas Sudzius, Vytautas Gudelis, Ramunas Aleksiejunas, Jean-Claude Launay

Année:

2003

Langue:

english

Fichier:

PDF, 200 KB

english, 2003

Photoelectric properties of highly excited ZnTe:V(Al, Sc) bulk crystals

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 1.44 MB

english, 2005

Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN

K. Jarašiūnas, T. Malinauskas, A. Kadys, R. Aleksiejūnas, M. Sūdžius, S. Miasojedovas, S. Juršenas, A. Žukauskas, D. Gogova, A. Kakanakova-Georgieva, E. Janzén, H. Larsson, B. Monemar, P. Gibart, B. B

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 217 KB

english, 2005

Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique

A. L. Gurskii, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubialevich, G. P. Yablonskii, R. Aleksiejūnas, K. Jarašiūnas, F. Letertre, B. Faure, B. Schineller, A. Alam, M. Heuken, Y. Dikme, H. Kalisch, R.

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 175 KB

english, 2005

Determination of carrier diffusion length in MOCVD-grown GaN epilayers on sapphire by optical techniques

E. V. Lutsenko, A. L. Gurskii, V. N. Pavlovskii, G. P. Yablonskii, T. Malinauskas, K. Jarašiūnas, B. Schineller, M. Heuken

Journal: